Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization

Characterizations of SiC/SiO2 Interface Quality Toward High Power MOSFETs Realization

Author(s):

Ziane, D.

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

1281

Page(to):

1286

Pages:

6

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013364
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Characterization of 4H-SiC MOS Structures with Al2O3 as Gate Dielectric Paskaleva, A., Ciechonski, R. R., Syvajarvi, M., Atanassova, E., Yakimova, R. Trans Tech Publications	7 Conference Proceedings Process Induced Extended Defects in SiC Grown via Sublimation Yakimova, R., Syvajarvi, M., Jacobson, H., Ciechonski, R.R., Vouroutzis, N., Stoemenos, J. Materials Research Society
2 Conference Proceedings Optical Characterization of Full SiC Wafer El Harrouni, I., Bluet, J.M., Ziane, D., Mermoux, M., Baillet, F., Guillot, G. Trans Tech Publications	8 Conference Proceedings Defects Characterization in SiC by Scanning Photoluminescence Spectroscopy Masarotto, L., Bluet, J.M., Berenguer, M., Girard, P., Guillot, G. Trans Tech Publications
3 Conference Proceedings Growth of Device Quality 4H-SiC High Velocity Epitaxy Yakimova, R., Syvajarvi, M., Ciechonski, R.R, Wahab, Q. Trans Tech Publications	9 Conference Proceedings Effect of Surface and Interface Recombination on Carrier Lifetime in 6H-SiC Layers J.W. Sun, S. Kamiyama, R. Yakimova, M. Syväjärvi Trans Tech Publications
4 Conference Proceedings SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps A. Perez-Tomas, M.R. Jennings, P.A. Mawby, J.A. Covington, P. Godignon, J. Millan, N. Mestres Trans Tech Publications	10 Conference Proceedings Origin and Behaviour of Deep Levels in Sublimation Growth of 4H-SiC Layers Syvajarvi, M., Yakimova, R., Ciechonski, R..R., Davydov, D., Lebedev, A.A., Janzen, E. Trans Tech Publications
5 Conference Proceedings Effect of Ambient on 4H-SiC Bulk Crystals Grown by Sublimation Ciechonski, R.R., Yakimova, R., Syvajarvi, M., Janzen, E. Trans Tech Publications	11 Conference Proceedings Characterization of Anisotropic Step-Bunching on As-Grown SiC Surfaces Syvajarvi, M., Yakimova, R., Iakimov, T., Janzen, E. Trans Tech Publications
6 Conference Proceedings Evaluation of On-State Resistance and Boron-Related Levels in n-Type 4H-SiC Ciechonski, R. R., Porro, S., Syvajarvi, M., Yakimova, R. Trans Tech Publications	12 Conference Proceedings Characterization of Homoepitaxial 4H-SiC Layer Grown from Silane/Propane System Sartel, C., Bluet, J.M., Souliere, V., El-Harrouni, I., Monteil, Y., Mermoux, M., Guillot, G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12