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Deep Level Investigation by Current and Capacitance Transient Spectroscopy in 4H-SiC MESFETs on Semi-Insulating Substrates

Author(s):
Gassoumi, M.
Sghaier, N.
Dermoul, I.
Chekir, F.
Maaref, H.
Bluet, J.M.
Guillot, G.
Morvan, E.
Noblanc, O.
Dua, C.
Brylinski, C.
6 more
Publication title:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Title of ser.:
Materials science forum
Ser. no.:
457-460
Pub. date:
2004
Page(from):
1185
Page(to):
1188
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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