Approaches to Stabilizing the Forward Voltage of Bipolar SiC Devices
- Author(s):
Sumakeris, J.J. Das, M. Hobgood, H.McD. Mueller, S.G. Paisley, M.J. Ha, S. Skowronski, M. Palmour, J.W. Carter, C.H., Jr. - Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 1113
- Page(to):
- 1116
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Techniques for Minimizing the Basal Plane Dislocation Density in SiC Epilayers to Reduce Vf Drift in SiC Bipolar Power Devices
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
3
Conference Proceedings
Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
5
Conference Proceedings
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
Developing an Effective and Robust Process for Manufacturing Bipolar SiC Power Devices
Trans Tech Publications |
12
Conference Proceedings
Do You Really Expect to Grow Epilayers on That? A Rationale for Growing Epilayers on Roughened Surfaces
Materials Research Society |