Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Fabrication of Mesa-Type pn Diodes without Forward Degradation on Ultra-High-Quality 6H-SiC Substrate

Author(s):

Tanaka, Y.

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

1009

Page(to):

1012

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013364
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	7 Conference Proceedings Fabrication of 4H-SiC Double-Epitaxial MOSFETs Harada, S., Okamoto, M., Yatsuo, T., Adachi, K., Suzuki, K., Suzuki, S., Fukuda, K., Arai, K. Trans Tech Publications
2 Conference Proceedings Growth and Evaluation of High Quality SiC Crystal by Sublimation Method Oyanagi, N., Yamaguchi, H., Kato, T., Nishizawa, S., Arai, K. Trans Tech Publications	8 Conference Proceedings Fabrication of 4H-SiC p-Channel MOSFET with High Channel Mobility Okamoto, M., Tanaka, M., Yatsuo, T., Fukuda, K. Trans Tech Publications
3 Conference Proceedings Electrical Properties of pn Diodes on 4H-SiC(000-1) C-Face and (11-20) Face Tanaka, Y., Kojima, K., Suzuki, T., Hayashi, T., Fukuda, K., Yatsuo, T., Arai, K. Trans Tech Publications	9 Conference Proceedings Large Diameter and Long Length Growth of SiC Single Crystal Kato, T., Ohno, T., Hirose, F., Oyanagi, N., Nishizawa, S., Arai, K. Trans Tech Publications
4 Conference Proceedings Fabrication of 700V SiC-SIT with Ultra-Low On-Resistance of 1.01mΩ･cm2 Tanaka, Y., Yano, K., Okamoto, M., Takatsuka, A., Fukuda, K., Kasuga, M., Arai, K., Yatsuo, T. Trans Tech Publications	10 Conference Proceedings Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
5 Conference Proceedings High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment Nishizawa, S.I., Kato, T., Kitou, Y., Oyanagi, N., Hirose, F., Yamaguchi, H., Bahng, W., Arai, K. Trans Tech Publications	11 Conference Proceedings Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, … Trans Tech Publications
6 Conference Proceedings Fabrication of 4H-SiC DIMOSFETs by High-Tempemture (>1400oC) Rapid Thermal Oxidation and Nitridation Using Cold-Wall Oxidation Furnace Kosugi, R., Suzuki, K., Takao, K., Hayashi, Y., Yatsuo, T., Fukuda, K., Ohashi, H., Arai, K. Trans Tech Publications	12 Conference Proceedings Numerical Simulation of Heat and Mass Transfer in SiC Sublimation Growth Nishizawa, S., Kato, T., Kitou, Y., Oyanagi, N., Arai, K. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12