4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues

4H-SiC Power Schottky Diodes. On the Way to Solve the Size Limiting Issues

Author(s):

Syrkin, A.

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

985

Page(to):

988

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013364
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density Syrkin, A., Dmitriev, V., Yakimova, R., Henry, A., Janzen, E. Trans Tech Publications	7 Conference Proceedings Characteristics of Ni Schottky Contacts on Compensated 4H-SiC Layers Kasamakova-Kolaklieva, L., Yakimova, R., Kakanakov, R., Kakanakova-Georgieva, A., Syvajarvi, M., Janzen, E. Trans Tech Publications
2 Conference Proceedings Power Schottky and p-n Diodes on SiC Epi-Wafers with Reduced Micropipe Density Syrkin, A., Dmitriev, V., Yakimova, R., Henry, A., Janzen, E. Trans Tech Publications	8 Conference Proceedings 4H-SiC pn Diode Grown by LPE Method for High-Power Applications Kuznetsov, N., Bauman, D., Gavrilin, A., Kassamakova, L., Kakanakov, R., Sarov, G., Cholakova, T., Zekentes, K., … Trans Tech Publications
3 Conference Proceedings Influence of Epitaxial Growth and Substrate Induced Defects on the Breakdown of High-Voltage 4H-SiC Schottky Diodes Wahab, Q., Ellison, A., Hallin, C., Henry, A., Persio, J. Di, Martinez, R., Janzen, E. Trans Tech Publications	9 Conference Proceedings Electroluminescence from 4H-SiC Schottky Diodes Carlsson, F.H.C., ul-Wahab, Q., Bergman, P.J., Janzen, E. Materials Research Society
4 Conference Proceedings Diffusion Welding Techniques for Power SiC Schottky Packaging Korolkov, O., Rang, T., Syrkin, A., Dmitriev, V. Trans Tech Publications	10 Conference Proceedings Doping-Related Strain in n-Doped 4H-SiC Crystals Jacobson, H., Birch, J., Lindefelt, U., Hallin, C., Henry, A., Yakimova, R., Janzen, E. Trans Tech Publications
5 Conference Proceedings Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC Kassamakova, L., Kakanakov, R., Yakimova, R., Kakanakova-Georgieva, A., Syvaejaervi, M., Wilzen, L., Janzen, E. Trans Tech Publications	11 Conference Proceedings P-n Junction Periphery Protection of 4H-SiC Power p-i-n Diodes Using Epitaxy and Dry Etching Sarov, G., Cholakova, T., Kakanakov, R. Trans Tech Publications
6 Conference Proceedings Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC Kassamakova, L., Kakanakov, R., Yakimova, R., Kakanakova-Georgieva, A., Syvajarvi, M., Wilzen, L., Janzen, E. Trans Tech Publications	12 Conference Proceedings Growth of Homoepitaxial Films on 4H-SiC(11-20)and 8° Off-Axis 4H-SiC(0001) Substrates and their Characterization Bishop, S.M., Preble, E.A., Hallin, C., Henry, A., Storasta, L., Jacobson, H., Wagner, B.P., Reitmeier, Z.J., Janzen, … Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12