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SiC Donor Doping by 300°C P Implantation: Characterization of the Doped Layer Properties in Dependence of the Post-Implantation Annealing Temperature

Author(s):
Publication title:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Title of ser.:
Materials science forum
Ser. no.:
457-460
Pub. date:
2004
Page(from):
945
Page(to):
950
Pages:
6
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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