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Growth and Characterisation of Heavily Al-Doped 4H-SiC Layers Grown by VLS in an Al-Si Melt

Author(s):
Jacquier, C.
Ferro, G.
Balloud, C.
Zielinski, M.
Camassel, J.
Polychroniadis, E.
Stoemenos, J.
Cauwet, F.
Monteil, Y.
4 more
Publication title:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Title of ser.:
Materials science forum
Ser. no.:
457-460
Pub. date:
2004
Page(from):
735
Page(to):
738
Pages:
4
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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