Anisotropy of Electron Mobility in n-Type 15R-SiC Studied by Raman Scattering
- Author(s):
Kurimoto, E. Hangyo, M. Harima, H. Kisoda, K. Nishiguchi, T. Nishino, S. Nakashima, S. Katsuno, M. Ohtani, N. - Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 621
- Page(to):
- 624
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Raman Microprobe Study of Carrier Density Profiles in Modulation-Doped 6H SiC
Trans Tech Publications |
8
Conference Proceedings
Deep UV Raman Spectroscopy of Epitaxial Graphenes on Vicinal 6H-SiC Substrates
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Electronic Properties of Doped SiC at Elevated Temperatures Studied by Rauran Scattering
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Micro-Raman Scattering Study of Strain Fields in Homo-Epitaxial Layer on Nitrogen- Doped 4H-SiC Substrate
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Raman Imaging Characterization of Electric Properties of SiC Near a Micropipe
Trans Tech Publications |