Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

Evidence for a Deep Two Charge State Defect in High Energy Electron Irradiated 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

481

Page(to):

484

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013363
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Evidence for Two Charge States of the S-Center in Ion-Implanted 4H-SiC David, M.L., Alfieri, G., Monakhov, E.V., Hallen, A., Barbot, J.F., Svensson, B.G. Trans Tech Publications	7 Conference Proceedings Ion Implantation Processing and Related Effects in SiC Svensson, B.G., Hallen, A., Wong-Leung, J., Janson, M.S., Linnarsson, M.K., Kuznetsov, A.Yu., Alfieri, G., Grossner, U., … Trans Tech Publications
2 Conference Proceedings Long Distance Point Defect Migration in Irradiated SiC Observed by Deep Level Transient Spectroscopy Alfieri, G., Grossner, U., Monakhov, E.V., Svensson, B.G., Steeds, J.W., Sullivan, W. Trans Tech Publications	8 Conference Proceedings A Laterally Resolved DLTS Study of Intrinsic Defect Diffusion in 4H-SiC after Low Energy Focused Proton Beam Irradiation L. Løvlie, L. Vines, B.G. Svensson Trans Tech Publications
3 Conference Proceedings Capacitance Spectroscopy Study of High Energy Electron Irradiated and Annealed 4H-SiC Alfieri, G., Monakhov, E. V., Linnarsson, K., Svensson, B. G. Trans Tech Publications	9 Conference Proceedings Influence of Growth Conditions on Irradiation Induced Defects in 4H-SiC I. Pintilie, K. Irmscher, U. Grossner, B.G. Svensson, B. Thomas Trans Tech Publications
4 Conference Proceedings Carrier Removal in Electron Irradiated 4H and 6H SiC M. Mikelsen, U. Grossner, J.H. Bleka, E.V. Monakhov, B.G. Svensson Trans Tech Publications	10 Conference Proceedings Implantation Temperature Dependent Deep Level Defects in 4H-SiC Aberg, D., Storasta, L., Hallen, A., Svensson, B.G. Trans Tech Publications
5 Conference Proceedings Deep Level Characterization of 5 MeV Proton Irradiated SiC PiN Diodes G. Alfieri, A. Mihaila, H.M. Ayedh, B.G. Svensson, P. Hazdra Trans Tech Publications	11 Conference Proceedings Thermal Stability of Deep-Level Defects in High-Purity Semi-Insulating 4H-SiC Substrate Studied by Admittance Spectroscopy N. Iwamoto, A. Azarov, T. Ohshima, A.M.M. Moe, B.G. Svensson Trans Tech Publications
6 Conference Proceedings Defect Evolution in Proton-Irradiated 4H SiC Investigated by Deep Level Transient Spectroscopy Leveque, P., Martin, D., Svensson, B.G., Hallen, A. Trans Tech Publications	12 Conference Proceedings OPTICAL PROPERTIES OF NOVEL VIBRONIC BANDS IN ELECTRON-IRRADIATED TIN DOPED SILICON Svensson, J.H., Monemar, B., Svensson, B.G. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12