Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC
- Author(s):
- Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 469
- Page(to):
- 472
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
7
Conference Proceedings
Investigation of an Ion-Implantation Induced High Temperature Persistent Intrinsic Defect in SiC
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC
Trans Tech Publications |
10
Conference Proceedings
High Growth Rate with Reduced Surface Roughness during On-Axis Homoepitaxial Growth of 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
11
Conference Proceedings
Growth and Photoluminescence Study of Aluminium Doped SiC Epitaxial Layers
Trans Tech Publications |
6
Conference Proceedings
Investigation of the Electronic Structure of the UD-4 Defect in 4H-SiC by Optical Techniques
Trans Tech Publications |
Trans Tech Publications |