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Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC

Author(s):
Gali, A.
Deak, P.
Rauls, E.
Ordejon, P.
Carlsson, F.H.C.
Ivanov, I.G.
Son, N.T.
Janzen, E.
Choyke, W.J.
4 more
Publication title:
Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
Title of ser.:
Materials science forum
Ser. no.:
457-460
Pub. date:
2004
Page(from):
443
Page(to):
448
Pages:
6
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499434 [0878499431]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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