Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC

Antisites as Possible Origin of Irradiation Induced Photoluminescence Centers in SiC: A Theoretical Study on Clusters of Antisites and Carbon Interstitials in 4H-SiC

Author(s):

Gali, A.

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

443

Page(to):

448

Pages:

6

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013363
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC Deak, P., Gali, A., Hajnal, Z., Frauenheim, Th., Son, N.T., Janzen, E., Choyke, W.J., Ordejon, P. Trans Tech Publications	7 Conference Proceedings Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC Aradi, B., Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications
2 Conference Proceedings Theoretical Investigation of an Intrinsic Defect in SiC Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications	8 Conference Proceedings Impurity-Controlled Dopant Activation - The Role of Hydrogen in p-Type Doping of SiC Aradi, B., Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications
3 Conference Proceedings Theoretical Investigation of an Intrinsic Defect in SiC Gali, A., Deak, P., Son, N.T., Janzen, E. Trans Tech Publications	9 Conference Proceedings New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC A. Gali, T. Hornos, N.T. Son, E. Janzén Trans Tech Publications
4 Conference Proceedings Theoretical Investigations of Complexes of p-Type Dopants and Carbon Interstitial in SiC: Bistable, Negative-U Defects Gali, A., Hornos, T., Deak, P., Son, N. T., Janzen, E., Choyke, W. J. Trans Tech Publications	10 Conference Proceedings Calculation of Hyperfine Constants of Defects in 4H-SiC Gali, A., Deak, P., Son, N.T., Janzen, E., von Bardeleben, H.J., Monge, J.-L. Trans Tech Publications
5 Conference Proceedings Theoretical Study of Antisite Aggregation in α-SiC Rauls, E., Gali, A., Deak, P., Frauenheim, Th. Trans Tech Publications	11 Conference Proceedings Intrinsic Defect Complexes in α-SiC: the Formation of Antisite Pairs Rauls, E., Hajnal, Z., Gali, A., Deak, P., Frauenheim, T. Trans Tech Publications
6 Conference Proceedings Boron Centers in 4H-SiC Aradi, B., Gali, A., Deak, P., Rauls, E., Frauenheim, T., Son, N.T. Trans Tech Publications	12 Conference Proceedings Vacancies and Their Complexes with H in SiC Deak, P., Gali, A., Aradi, B., Son, N. T., Janzen, E., Choyke, W. J. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12