Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

Morphological Evolution of SiC(0001) Surfaces without Ambient Gas by High Temperature Annealing in High-Vacuum

Author(s):

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

403

Page(to):

406

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013363
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Morphological Instability of 4H-SiC (0001) Basal Plane Surface during Si-Vapor Thermal Etching S. Ushio, K. Nakanishi, N. Ohtani, T. Kaneko Trans Tech Publications	7 Conference Proceedings Surface Phase Diagram of 4H-SiC {0001} Step-Terrace Structures during Si-Vapor Etching in a TaC Crucible S. Ushio, T. Karaki, K. Hagiwara, N. Ohtani, T. Kaneko Trans Tech Publications
2 Conference Proceedings Formation of Periodic Steps on 6H-SiC (0001) Surface by Annealing in a High Vacuum S.P. Lebedev, V.N. Petrov, I.S. Kotousova, A.A. Lavrent'ev, P.A. Dement'ev Trans Tech Publications	8 Conference Proceedings Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC Asaoka, Y., Hiramoto, M., Sano, N., Kaneko, T. Trans Tech Publications
3 Conference Proceedings The Formation of an Epitaxial-Graphene Cap Layer for Post-Implantation High Temperature Annealing of SiC and its In Situ* Removal by Si-Vapor Etching* S. Ushio, A. Adachi, K. Matsuda, N. Ohtani, T. Kaneko Trans Tech Publications	9 Conference Proceedings Traveling Self-Confined-Solvent Method: A Novel LPE Growth of 6H-SiC Asaoka, Y., Hiramoto, M., Sano, N., Kaneko, T. Trans Tech Publications
4 Conference Proceedings Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications	10 Conference Proceedings Direct Observation of the Edge Termination of Surface Steps on 4H/6H-SiC {0001} by Tilted Low-Voltage Scanning Electron Microscopy K. Ashida, T. Kajino, Y. Kutsuma, N. Ohtani, T. Kaneko Trans Tech Publications
5 Conference Proceedings Observation of the Surface Morphology on the (0001)C Facet of 4H-SiC Boules T. Yamaguchi, S. Sato, N. Ohtani, M. Katsuno, T. Fujimoto Trans Tech Publications	11 Conference Proceedings Development of a Novel Cap-Free Activation Annealing Technique of 4H-SiC by Si-Vapor Ambient Annealing Using TaC/Ta Composite Materials S. Torimi, S. Nogami, T. Kaneko Trans Tech Publications
6 Conference Proceedings REDUCTION OF GROWN-IN DEFECTS BY HIGH TEMPERATURE ANNEALING Adachi, N., Hisatomi, T., Sano, M., Tsuya, H. Electrochemical Society	12 Conference Proceedings Study of Terminated Species on 4H-SiC (0001) Surfaces Planarized by Catalyst-Referred Etching P.V. Bui, S. Sadakuni, T. Okamoto, K. Arima, Y. Sano Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12