Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Uniformity Improvement in SiC Epitaxial Growth by using Si-Condensation

Author(s):

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

225

Page(to):

228

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013363
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Improvement of SiC Wafer Warp by Annealing Sasaki, M., Harada, S., Okamoto, Y., Kinoshita, H., Miyanagi, Y., Shiomi, H. Trans Tech Publications	7 Conference Proceedings The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity Miyanagi, Y., Nakayama, K., Shiomi, H., Nishino, S. Trans Tech Publications
2 Conference Proceedings The Effect of Epitaxial Growth on Warp of SiC Wafers Nakayama, K., Miyanagi, Y., Maruyama, K., Okamoto, Y., Shiomi, H., Nishino, S. Trans Tech Publications	8 Conference Proceedings Uniformization of Radial Temperature Gradient in Sublimation Growth of SiC Tanaka, H., Nishiguchi, T., Sasaki, M., Ohshima, S., Nishino, S. Trans Tech Publications
3 Conference Proceedings The Effect of Epitaxial Growth on Warp of SiC Wafers Nakayama, K., Miyanagi, Y., Maruyama, K., Okamoto, Y., Shiomi, H., Nishino, S. Trans Tech Publications	9 Conference Proceedings Uniformity Improvement in Carrier Concentration on 150 mm Diameter C-Face Epitaxial Growth of 4H-SiC J. Nishio, H. Asamizu, C. Kudou, S. Ito, K. Masumoto Trans Tech Publications
4 Conference Proceedings Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method Sasaki, M., Miyanagi, Y., Nakayama, K., Shiomi, H., Nishino, S. Trans Tech Publications	10 Conference Proceedings Characterization of 2 Inch SiC Wafers Made by the Sublimation Method Sasaki, M., Shiomi, H., Nishino, S. Trans Tech Publications
5 Conference Proceedings Stress Distribution in 2in SiC Wafer Measured by Photoelastic Method Sasaki, M., Miyanagi, Y., Nakayama, K., Shiomi, H., Nishino, S. Trans Tech Publications	11 Conference Proceedings Growth of Micropipe Free Crystals on 4H-SiC {03-38} Seeds Furusho, T., Kobayashi, R., Nishiguchi, T., Sasaki, M., Hirai, K., Hayashi, T., Kinoshita, H., Shiomi, H. Trans Tech Publications
6 Conference Proceedings The Development of 2in 6H-SiC Wafer with High Thermal-Conductivity Miyanagi, Y., Nakayama, K., Shiomi, H., Nishino, S. Trans Tech Publications	12 Conference Proceedings Polytype and Defect Control of Two Inch Diameter Bulk SiC Sasaki, M., Shiomi, H., Harima, H., Nishino, S. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12