High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face

High-Speed Growth of High-Purity Epitaxial Layers with Specular Surface on 4H-SiC(000-1) Face

Author(s):

Publication title:

Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003

Title of ser.:

Materials science forum

Ser. no.:

457-460

Pub. Year:

2004

Page(from):

197

Page(to):

200

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499434 [0878499431]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013363
Series ID:	PA00000012
Conf. info. (Name):	ICSCRM : Intenational Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2003 : 10th
Conf. info. (Venue):	Lyon, France
Conf. info. (Date):	2003.10.05-2003.10.10

Similar Items:

1 Conference Proceedings Fast Epitaxial Growth of Thick 4H-SiC with Specular Surface by Chimney-Type Vertical Hot-Wall Chemical Vapor Deposition Fujiwara, H., Danno, K., Kimoto, T., Tojo, T., Matsunami, H. Trans Tech Publications	7 Conference Proceedings High Temperature Deep Level Transient Spectroscopy Investigations of n-Type 4H-SiC Epitaxial Layers Schoner, A., Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
2 Conference Proceedings Epitaxial Growth of 4H-SiC on 4o Off-Axis (0001) and (000-1) Substrates by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications	8 Conference Proceedings Midgap Levels in As-Grown 4H-SiC Epilayers Investigated by DLTS Danno, K., Kimoto, T., Matsunami, H. Trans Tech Publications
3 Conference Proceedings Complete Micropipe Dissociation in 4H-SiC(03-38) Epitaxial Growth and its Impact on Reverse Characteristics of Schottky Barrier Diodes Kimoto, T., Danno, K., Fujihira, K., Shiomi, H., Matsunami, H. Trans Tech Publications	9 Conference Proceedings Improved Surface Morphology and Background Doping Concentration in 4H-SiC(0001) Epitaxial Growth by Hot-Wall CVD Wada, K., Kimoto, T., Nishikawa, K., Matsunami, H. Trans Tech Publications
4 Conference Proceedings Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society	10 Conference Proceedings Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
5 Conference Proceedings Growth and Electrical Characterization of 4H-SiC Epilayers T. Kimoto, K. Danno, T. Hori, H. Matsunami Trans Tech Publications	11 Conference Proceedings Fast Epitaxial Growth of 4H-SiC by Chimney-Type Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications
6 Conference Proceedings Fast Epitaxial Growth of High-Quality 4H-SiC by Vertical Hot-Wall CVD Fujihira, K., Kimoto, T., Matsunami, H. Trans Tech Publications	12 Conference Proceedings Surface Mechanisms in Homoepitaxial Growth on α-SiC{0001}-Vicinal Faces Nakamura, S.I., Kimoto, T., Matsunami, H. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12