High-Quality SiC Bulk Single Crystal Growth Based on Simulation and Experiment
- Author(s):
Nishizawa, S.I. Kato, T. Kitou, Y. Oyanagi, N. Hirose, F. Yamaguchi, H. Bahng, W. Arai, K. - Publication title:
- Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003
- Title of ser.:
- Materials science forum
- Ser. no.:
- 457-460
- Pub. Year:
- 2004
- Page(from):
- 29
- Page(to):
- 34
- Pages:
- 6
- Pub. info.:
- Uetikon-Zuerich: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499434 [0878499431]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Enlargement of SiC Single Crystal: Enhancement of Lateral Growth using Tapered Graphite Lid
Trans Tech Publications |
7
Conference Proceedings
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
Characterization of Inclusions in SiC Bulk Crystals Grown by Modified Lely Method
Trans Tech Publications |
11
Conference Proceedings
SiC Single Crystal Growth Rate Measurement by in-Situ Observation using the Transmission X-Ray Technique
Trans Tech Publications |
6
Conference Proceedings
Dislocation Constraint by Etch-Back Process of Seed Crystal in SiC Bulk Crystal Growth
Trans Tech Publications |
Trans Tech Publications |