MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

MIS Photodiodes of Polymorphous Silicon Deposited at Higher Growth Rates by 27.12 MHz PECVD Discharge

Author(s):

Publication title:

Advanced materials forum II : proceedings of the II International Materials Symposium, Materiais 2003 and XI Encontro Sociedade Portugesa de Materiais - SPM, Campus da Caparica, April 14-16, Caparica, Portugal, 2003

Title of ser.:

Materials science forum

Ser. no.:

455-456

Pub. Year:

2004

Page(from):

73

Page(to):

76

Pages:

4

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499410 [0878499415]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013362
Series ID:	PA00000012
Conf. info. (Name):	International Materials Symposium ; Encontro Sociedade Portugesa de Materiais - SPM
Conf. info. (Number):	2003 : 2nd ; 11th
Conf. info. (Venue):	Caparica, Portugal
Conf. info. (Date):	2003.04.14-2003.04.16

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