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Identities of the Deep Level Defects E1/E2 in 6H Silicon Carbide

Author(s):
Ling, C.C.
Chen, X.D.
Gong, M.
Weng, H.M.
Hang, D.S.
Beling, C.D.
Fung, S.
Lam, T.W.
Lam, C.H.
4 more
Publication title:
Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003
Title of ser.:
Materials science forum
Ser. no.:
445-446
Pub. date:
2004
Page(from):
135
Page(to):
137
Pages:
3
Pub. info.:
Uetikon-Zuerich: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499366 [0878499369]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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