Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

Effect of Implanted Ion Mass and Incident Energy on Defect and Ion Depth-Distributions in Ion-Implanted Si

Author(s):

Publication title:

Positron annihilation ICPA-13 : proceedings of the 13th International Conference on Positron Annihilation, Kyoto, Japan, September 2003

Title of ser.:

Materials science forum

Ser. no.:

445-446

Pub. Year:

2004

Page(from):

108

Page(to):

110

Pages:

3

Pub. info.:

Uetikon-Zuerich: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499366 [0878499369]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013357
Series ID:	PA00000012
Conf. info. (Name):	ICPA : International Conference on Positron Annihilation
Conf. info. (Number):	13th
Conf. info. (Venue):	Kyoto, Japan
Conf. info. (Date):	2003.09.00

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