Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level

Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level

Author(s):

Domeij, M.

Publication title:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

Title of ser.:

Materials science forum

Ser. no.:

433-436

Pub. Year:

2003

Page(from):

847

Page(to):

850

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013351
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2002 : 4th
Conf. info. (Venue):	Linköping, Sweden
Conf. info. (Date):	2002.09.02-2002.09.05

Similar Items:

1 Conference Proceedings The Deep Boron Level in High-Voltage PiN Diodes Aberg, D., Hallen, A., OEsterman, J., Zimmermann, U., Svensson, B.G. Trans Tech Publications	7 Conference Proceedings Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers Zimmermann, U., Osterman, J., Zhang, J., Henry, A., Hallen, A. Trans Tech Publications
2 Conference Proceedings Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects Domeij, M., Brunahl, H., Ostling, M. Trans Tech Publications	8 Conference Proceedings Electrical Characterization of High-Voltage 4H-SiC Diodes on High-Temperature CVD-Grown Epitaxial Layers Zimmermann, U., OEsterman, J., Zhang, J., Henry, A., Hallen, A. Trans Tech Publications
3 Conference Proceedings Measurement and Device Simulation of Avalanche Breakdown in High-Voltage 4H-SiC Diodes Including the Influence of Macroscopic Defects Domeij, M., Brunahl, H., Ostling, M. Trans Tech Publications	9 Conference Proceedings Implantation Temperature Dependent Deep Level Defects in 4H-SiC Aberg, D., Storasta, L., Hallen, A., Svensson, B.G. Trans Tech Publications
4 Conference Proceedings The Deep Boron Level in High-Voltage PiN Diodes Stadler, W., Hallen, A., Osterman, J., Zimmermann, U., Svensson, B.G. Trans Tech Publications	10 Conference Proceedings Current Voltage Characteristics of High-Voltage 4H Silicon Carbide Diodes Zimmermann, U., Hallen, A., Breitholtz, B. Trans Tech Publications
5 Conference Proceedings Reverse Recovery and Avalanche Injection in High Voltage SiC PIN Diodes Domeij,M., Breitholtz,B., Linnros,J., Ostling,M. Trans Tech Publications	11 Conference Proceedings Comparison between Implanted and Epitaxial PiN-Diodes on 4H-Silicon Carbide Zimmermann, U., Domeij, M., Hallen, A., Oestling, M. Trans Tech Publications
6 Conference Proceedings Dynamic Avalanche and Trapped Charge in 4H-SiC Diodes Domeij, M., Breitholtz, B., Aberg, D., Martinez, A., Bergman, P. Trans Tech Publications	12 Conference Proceedings Electron Beam Induced Current Investigation of High-Voltage 4H Silicon Carbide Diodes Osterman, J., Hallen, A., Jargelius, M., Zimmermann, U., Galeckas, A., Breitholtz, B. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12