1kV 4H-SiC JBS Rectifiers Fabricated Using an AlN Capped Anneal
- Author(s):
Zhu, L. Shanbhag, M. Chow, T.P. Jones, K.A. Ervin, M.H. Shah, P.B. Derenge, M.A. Vispute, R.D. Venkatesan, T. Agarwal, A. - Publication title:
- Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
- Title of ser.:
- Materials science forum
- Ser. no.:
- 433-436
- Pub. Year:
- 2003
- Page(from):
- 843
- Page(to):
- 846
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878499205 [0878499202]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Characteristics and Ionization Coefficient Extraction of 1kv 4H-SiC Implanted Anode PiN Rectifiers with Near Ideal Performance Fabricated Using AlN Capped …
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Electrochemical Society |
Trans Tech Publications |
Materials Research Society |
4
Conference Proceedings
Performance Comparison of 1.5kV 4H-SiC Buried Channel and Lateral Channel JBS Rectifiers
Trans Tech Publications |
10
Conference Proceedings
Approaches for Reduction of the Defect Density in Group III Nitride Based Heterostructures
Materials Research Society |
Trans Tech Publications |
11
Conference Proceedings
Variations in the Effects of Implanting Al at Different Concentrations into SiC
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Observation of Thermal-Annealing Evolution of Defects in Ion-Implanted 4H-SiC by Luminsescence
Trans Tech Publications |