Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

Electron-Induced Damage Effects in 4H-SiC Schottky Diodes

Author(s):

Publication title:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

Title of ser.:

Materials science forum

Ser. no.:

433-436

Pub. Year:

2003

Page(from):

439

Page(to):

442

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013351
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2002 : 4th
Conf. info. (Venue):	Linköping, Sweden
Conf. info. (Date):	2002.09.02-2002.09.05

Similar Items:

1 Conference Proceedings 'Recovery' Effect of Electron Induced Damage in 4H-SiC Schottky Diodes Castaldini, A., Cavallini, A., Rigutti, L., Nava, F., Fuochi, P.G., Vanni, P. Materials Research Society	7 Conference Proceedings Electrical and Optical Characterization of Electron Irradiated X Rays Detectors Based on 4H-SiC Epitaxial Layers Le Donne, A., Binetti, S., Acciarri, M., Castaldini, A., Nava, F., Cavallini, A., Pizzini, S. Trans Tech Publications
2 Conference Proceedings Charged Particle Detection Properties of Epitaxial 4H-SiC Schottky Diodes Nava, F., Vanni, P., Verzellesi, G., Castaldini, A., Cavallini, A., Polenta, L., Nipoti, R., Donolato, C. Trans Tech Publications	8 Conference Proceedings Deep Levels Induced by High Fluence Proton Irradiation in Undoped GaAs Diodes Castaldini, A., Cavallini, A., Polenta, L., Canali, C., Nava, F., Ferrini, R., Galli, M. MRS - Materials Research Society
3 Conference Proceedings DEFECTS INDUCED BY PROTONS AND ｦﾃ-RAYS IN SEMI-INSULATING GaAs DETECTORS Castaldini, A., Cavallini, A., Papa, C. del, Fuochi, G., Alietti, M., Canali, C., Nava, F., Paccagnella, A., Lanzieri, … MRS - Materials Research Society	9 Conference Proceedings Deep Levels in 4H Silicon Carbide Epilayers Induced by Neutron-Irradiation up to 10^16 n/cm2 Anna Cavallini, Antonio Castaldini, Filippo Nava, Paolo Errani, Vladimir Cindro Materials Research Society
4 Conference Proceedings Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes Scaltrito, L., Porro, S., Giorgis, F., Mandracci, P., Cocuzza, M., Pirri, C.F., Ricciardi, C., Ferrero, S., Richieri, … Trans Tech Publications	10 Conference Proceedings SiC-Based Schottky Diode Gas Sensors Hunter,G.W., Neudeck,P.G., Chen,L.-Y., Knight,D., Li,C.C., Wu,Q.H. Trans Tech Publications
5 Conference Proceedings Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes Scaltrito, L., Celasco, E., Porro, S., Ferrero, S., Giorgis, F., Pirri, C.F., Perrone, D., Meotto, U., Mandracci, P., … Trans Tech Publications	11 Conference Proceedings Correlation between Current Transport and Defects in n+/p 6H-SiC Diodes Canino, M., Castaldini, A., Cavallini, A., Moscatelli, F., Nipoti, R., Poggi, A. Trans Tech Publications
6 Conference Proceedings Electronic Levels Induced by Irradiation in 4H-Silicon Carbide Castaldini, A., Cavallini, A., Rigutti, L., Nava, F. Trans Tech Publications	12 Conference Proceedings Imaging of Extended Defects by Quenched Infra-red Beam Induced Currents ( Q-IRBIC ) Castaldini A., Cavallini A. Plenum Press

1

2

3

4

5

6

7

8

9

10

11

12