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Majority Traps Observed in H+- or He+-Implanted Al-Doped 6H-SiC by Admittance and Deep Level Transient Spectroscopy

Author(s):
Publication title:
Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden
Title of ser.:
Materials science forum
Ser. no.:
433-436
Pub. date:
2003
Page(from):
379
Page(to):
382
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878499205 [0878499202]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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