Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

Stacking Fault Formation in Highly Doped 4H-SiC Epilayers during Annealing

Author(s):

Publication title:

Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden

Title of ser.:

Materials science forum

Ser. no.:

433-436

Pub. Year:

2003

Page(from):

253

Page(to):

256

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878499205 [0878499202]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013351
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2002 : 4th
Conf. info. (Venue):	Linköping, Sweden
Conf. info. (Date):	2002.09.02-2002.09.05

Similar Items:

1 Conference Proceedings Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soderholm, R., Lendenmann, H. Trans Tech Publications	7 Conference Proceedings Optical and Structural Properties of In-Grown Stacking Faults in 4H-SiC Epilayers J. Hassan, A. Henry, J.P. Bergman Trans Tech Publications
2 Conference Proceedings Microstructural Characterization of Recombination-Induced Stacking Faults in High-Voltage SiC Diodes Liu, J.Q., Skowronski, M., Hallin, C., Soederholm, R., Lendenmann, H. Trans Tech Publications	8 Conference Proceedings Stacking Fault Formation in Highly Nitrogen-Doped 4H-SiC Substrates with Different Surface Preparation Conditions M. Katsuno, M. Nakabayashi, T. Fujimoto, N. Ohtani, H. Yashiro Trans Tech Publications
3 Conference Proceedings Observation of Free Carrier Redistribution Resulting from Stacking Fault Formation in Annealed 4H-SiC Glembocki, O.J., Skowronski, M., Prokes, S.M., Gaskill, D.K., Caldwell, J.D. Trans Tech Publications	9 Conference Proceedings Point Defects in 4H SiC Grown by Halide Chemical Vapor Deposition M.E. Zvanut, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications
4 Conference Proceedings Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC Liu, J.Q., Sanchez, E.K., Skowronski, M. Trans Tech Publications	10 Conference Proceedings Defect Level of the Carbon Vacancy-Carbon Antisite Pair Center in SI 4H SiC M.E. Zvanut, G. Ngetich, H.J. Chung, A.Y. Polyakov, M. Skowronski Trans Tech Publications
5 Conference Proceedings Structure of 2D-Nucleation-Induced Stacking Faults in 6H-SiC Liu, J.Q., Sanchez, E.K., Skowronski, M. Trans Tech Publications	11 Conference Proceedings Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates Zhang, M., Hobgood, H.M., Treu, M., Pirouz, P. Trans Tech Publications
6 Conference Proceedings Growth Induced Stacking Fault Formation in 4H-SiC D. Siche, M. Albrecht, H.J. Rost, A. Sendzik Trans Tech Publications	12 Conference Proceedings Structure of "Star" Defect in 4H-SiC Substrates and Epilayers Lee, J.W., Skowronski, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12