Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
- Author(s):
- Publication title:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- Title of ser.:
- Materials science forum
- Ser. no.:
- 389-393
- Pub. Year:
- 2002
- Page(from):
- 1535
- Page(to):
- 1538
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Gallium Nitride Metal-Insulator-Semiconductor Capacitors Using Low-Pressure Chemical Vapor Deposited Oxides
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Interface Properties of 4H-SiC/SiO2 with MOS Capacitors and FETs Annealed in O2, N2O, NO and CO2
Trans Tech Publications |
Trans Tech Publications |
9
Conference Proceedings
Hysteresis in Transfer Characteristics in 4H-SiC Depletion/Accumulation-Mode MOSFETs
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
6
Conference Proceedings
Voltage Handling Capabilhy and Microwave Performance of a 4H-SiC MESFET-A Simulation Study
Trans Tech Publications |
Trans Tech Publications |