Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities

Author(s):

Lu, C.-Y.

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

977

Page(to):

980

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Effect of Process Variations on 4H Silicon Carbide n-Channel MOSFET Mobilities Lu, C.-Y., Cooper, J.A., Jr., Chung, G.Y., Williams, J.R., McDonald, K., Feldman, L.C. Trans Tech Publications	7 Conference Proceedings High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications
2 Conference Proceedings Nitrogen Passivation of the Interface States Near the Conduction Band Edge in 4H-Silicon Carbide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Materials Research Society	8 Conference Proceedings Bonding, Defects, and Defect Dynamics in the SiC-SiO2 System Pantelides, S.T., Buczko, R., Ventra, M. Di, Wang, S., Kim, S.-G., Pennycook, S.J., Duscher, G., Feldman, L.C., … Materials Research Society
3 Conference Proceedings Nitrogen Content and Interface Trap Reduction in SiO2/4H-SiC McDonald, K., Weller, R.A., Pantelides, S.T., Feldman, L.C., Chung, G.Y, Tin, C.C., Williams, J.R. Electrochemical Society	9 Conference Proceedings The Effects Of Post-Oxidation Anneal Conditions On Interface State Density Near The Conduction Band Edge And Inversion Channel Mobility For SiC MOSFETs Chung, Gilyong, Tin, Chin-Che, Williams, John Robert, McDonald, Kyle, DiVentra, M., Pantelides, S.T., Feldman, Len C., … Materials Research Society
4 Conference Proceedings Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	10 Conference Proceedings Ion beam nanosmoothing of sapphire and silicon carbide surfaces Fenner,D.B., DiFilippo,V., Bennett,J.A., Tetreault,T.G., Hirvonen,J.K., Feldman,L.C. SPIE-The International Society for Optical Engineering
5 Conference Proceedings Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide Williams, J.R., Chung, G.Y., Tin, C.C., McDonald, K., Farmer, D., Chanana, R.K., Weller, R.A., Pantelides, S.T., … Trans Tech Publications	11 Conference Proceedings Channel Hot-Carrier Effect of 4H-SiC MOSFET L.C. Yu, K.P. Cheung, J.S. Suehle, J.P. Campbell, K. Sheng Trans Tech Publications
6 Conference Proceedings High-Current, NO-Annealed Lateral 4H-SiC MOSFETs Das, M.K., Chung, G.Y., Williams, J.R., Saks, N.S., Lipkin, L.A., Palmour, J.W. Trans Tech Publications	12 Conference Proceedings Silicon Carbide Power MOSFETs Melloch, M.R., Cooper, J.A., Jr., Tan, J., Spitz, J. Electrochemical Society

1

2

3

4

5

6

7

8

9

10

11

12