Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
- Author(s):
- Publication title:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- Title of ser.:
- Materials science forum
- Ser. no.:
- 389-393
- Pub. Year:
- 2002
- Page(from):
- 925
- Page(to):
- 928
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Electrical Properties and Interface Reaction of Annealed Cu/4H-SiC Schottky Rectifiers
Trans Tech Publications |
7
Conference Proceedings
Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Improvement of SiO2/α-SiC Interface Properties by Nitrogen Radical Treatment
Trans Tech Publications |
3
Conference Proceedings
Modification of SiO2/4H-SiC Interface Properties by High-Pressure H2O Vapor Annealing
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Significant Decrease of the Interface State Density by NH3 Plasma Pretreatment at 4H-SiC (000-1) Surface and its Bond Configuration
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
6
Conference Proceedings
High Temperature NO Annealing of Deposited SiO2 and SiON Films on N-Type 4H-SiC
Trans Tech Publications |
Trans Tech Publications |