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A Comparative Study of High-Temperature Aluminum Post-Implantation Annealing in 6H- and 4H-SiC, Non-Uniform Temperature Effects

Author(s):
Lazar, M.
Raynaud, C.
Planson, D.
Locatelli, M.-L.
Isoird, K.
Ottaviani, L.
Chante, J.P.
Nipoti, R.
Poggi, A.
Cardinali, G.
5 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. date:
2002
Page(from):
827
Page(to):
830
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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