The Brittle-to-Ductile Transition in 4H-SiC

The Brittle-to-Ductile Transition in 4H-SiC

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

767

Page(to):

772

Pages:

6

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings The Brittle-to-Ductile Transition in 4H-SiC Zhang, M., Hobgood, H.M., Demenet, J.L., Pirouz, P. Trans Tech Publications	7 Conference Proceedings TEM Observations of 4H-SiC Deformed at Room Temperature and 150°C Demenet, J.L., Milhet, X., Rabier, J., Cordier, P. Trans Tech Publications
2 Conference Proceedings Deformation of 4H-SiC Single Crystals Oriented for Prism Slip Zhang, M., Hobgood, H.M., Pirouz, P. Trans Tech Publications	8 Conference Proceedings Analysis of Dislocations Nucleated after Nano Indentation Tests at Room Temperature in 4H-SiC J.L. Demenet, M. Amer, C. Tromas, J. Rabier Trans Tech Publications
3 Conference Proceedings Generation of Stacking Faults in Highly Doped n-Type 4H-SiC Substrates Zhang, M., Hobgood, H.M., Treu, M., Pirouz, P. Trans Tech Publications	9 Conference Proceedings TEM of Dislocations in Forward-Biased 4H-SiC PiN Diodes Zhang, M., Lendenmann, H., Pirouz, P. Trans Tech Publications
4 Conference Proceedings Deformation Tests on 4H-SiC Single Crystals between 900℃ and 1360℃ and the Microstructure of the Deformed Samples Demenet, J. L., Hong, M. -H., Pirouz, P. Trans Tech Publications	10 Conference Proceedings The Brittle-Ductile Transition of Silicon. Brede M., Haasen P. Martinus Nijhoff Publishers
5 Conference Proceedings Dislocation Activity in 4H-SiC in the Brittle Domain J.L. Demenet, M. Amer, A. Mussi, J. Rabier Trans Tech Publications	11 Conference Proceedings Study of an Al Composite Reinforced with Nanometric SiC Particles,Produced by Mechanical Alloying Malchere,A., Grosbras,M., Demenet,J.L., Bresson,L., Gaffet,E. Trans Tech Publications
6 Conference Proceedings *Transition temperatures in plastic yielding and fracture of semiconductors Pirouz, P., Kubin, L. P., Demenet, J. L., Hong, M. H., Samant, A. V. MRS-Materials Research Society	12 Conference Proceedings Prediction of Characteristic Length and Fracture Toughness in Ductile-Brittle Transition Z. X. Wang, H. M. Li, Y. J. Chao, P. S. Lam American Society of Mechanical Engineers

1

2

3

4

5

6

7

8

9

10

11

12