Electrical Activity of Residual Boron in Silicon Carbide

Electrical Activity of Residual Boron in Silicon Carbide

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

549

Page(to):

552

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013331
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Electrical Activity of Residual Boron in Silicon Carbide Storasta, L., Bergman, J.P., Hallin, C., Janzen, E. Trans Tech Publications	7 Conference Proceedings Neutron Irradiation of 4H SiC Carlsson, F.H.C., Storasta, L., Magnusson, B., Bergman, J.P., Skoeld, K., Janzen, E. Trans Tech Publications
2 Conference Proceedings Characterisation and Defects in Silicon Carbide Bergman, J.P., Jakobsson, H., Storasta, L., Carlsson, F.H.C., Magnusson, B., Sridhara, S.G., Pozina, G., Lendenmann, H., … Trans Tech Publications	8 Conference Proceedings Doping of Silicon Carbide by Ion Implantation Svensson, B.G., Hallen, A., Linnarsson, M.K., Kuznetsov, A.Yu., Janson, M.S, Aberg, D., Oesterman, J., Persson, P.O.A., … Trans Tech Publications
3 Conference Proceedings Characterisation and Defects in Silicon Carbide Bergman, J.P., Jakobsson, H., Storasta, L., Carlsson, F.H.C., Magnusson, B., Sridhara, S., Pozina, G., Lendenmann, H., … Trans Tech Publications	9 Conference Proceedings Recombination Enhanced Defect Annealing in 4H-SiC Storasta, L., Carlsson, F. H. C., Bergman, J. P., Janzen, E. Trans Tech Publications
4 Conference Proceedings Correlation between Electrical and Optical Mapping of Boron Related Complexes in 4H-SiC Storasta, L., Magnusson, B., Henry, A., Linnarsson, M.K., Bergman, J.P., Janzen, E. Trans Tech Publications	10 Conference Proceedings Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiC Lendenmann, H., Bergman, J.P., Dahlquist, F., Hallin, C. Trans Tech Publications
5 Conference Proceedings Investigations of Possible Nitrogen Participation in the Z1/Z2 Defect in 4H-SiC Storasta, L., Henry, A., Bergman, J.P., Janzen, E. Trans Tech Publications	11 Conference Proceedings Proton Irradiation Induced Defects in 4H-SiC Storasta, L., Carlsson, F.H.C., Sridhara, S.G., Aberg, D., Bergman, J.P., Hallen, A., Janzen, E. Trans Tech Publications
6 Conference Proceedings Properties of Thick n- and p-Type Epitaxial Layers of 4H-SiC Grown by Hot-Wall CVD on Off- and On-Axis Substrates ul Hassan, J., Hallin, C., Bergman, J.P., Janzen, E. Trans Tech Publications	12 Conference Proceedings Properties of Different Stacking Faults that Cause Degradation in SiC PiN Diodes Jacobson, H., Bergman, J.P., Hallin, C., Tuomi, T., Janzen, E. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12