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Growth of 3-inch Diameter 6H-SiC Single Crystals by Sublimation Physical Vapor Transport

Author(s):
Wang, S.
Sanchez, E.K.
Kopec, A.
Poplawski, S.
Ware, R.
Holmes, S.
Balkas, C.M.
Timmerman, A.G.
3 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. date:
2002
Page(from):
35
Page(to):
38
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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