Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance

Author(s):

Na, H. J.

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

1383

Page(to):

1386

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013330
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Fabrication of 4H-SiC Planar MESFETs Having Low Contact Resistance Na, H.J., Kim, H.J., Adachi, K., Kiritani, N., Tanimoto, S., Okushi, H., Arai, K. Trans Tech Publications	7 Conference Proceedings Fabrication and Characterization of 4H-SiC Planar MESFET Using Ion- Implantation Na, H.J., Kim, D.H., Jung, S.Y., Song, I.B., Um, M.Y., Song, H.K., Jeong, J.K., Lee, J.B., Kim, H.J. Trans Tech Publications
2 Conference Proceedings Single Contact-Material MESFETs on 4H-SiC Tanimoto, S., Inada, M., Kiritani, N., Hoshi, M., Okushi, H., Arai, K. Trans Tech Publications	8 Conference Proceedings Breakdown Electric Field in 4H-SiC Epitaxial Layer Grown on Various Net-Doping Substrates Ono, R., Fujimaki, M., Hon-Joo, N., Tanimoto, S., Shinohe, T., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications
3 Conference Proceedings Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs Kiritani, N., Hoshi, M., Tanimoto, S., Adachi, K., Nishizawa, S.-i., Yatsuo, T., Okushi, H., Arai, K. Trans Tech Publications	9 Conference Proceedings Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
4 Conference Proceedings Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H. Trans Tech Publications	10 Conference Proceedings Ion-Implantation Induced Deep Levels in SiC Studied by Isothermal Capacitance Transient Spectroscopy (ICTS) Ono, R., Fujimaki, M., Senzaki, J., Tanimoto, S., Shinohe, T., Okushi, H., Arai, K. Trans Tech Publications
5 Conference Proceedings Ohmic Contact Structure and Fabrication Process Applicable to Practical SiC Devices Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H. Trans Tech Publications	11 Conference Proceedings 4H-SiC Planar MESFETs on High-Purity Semi-Insulating Substrates J.H. Yim, H.K. Song, J.H. Moon, H.S. Seo, J.H. Lee, H.J. Na, J.B. Lee, H.J. Kim Trans Tech Publications
6 Conference Proceedings Gate Oxide with High Dielectric Breakdown Strength after Undergoing a Typical Power MOSFET Fabrication Process Tanimoto, S., Kiritani, N., Hoshi, M., Okushi, H., Arai, K. Trans Tech Publications	12 Conference Proceedings Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations I.H. Kang, W. Bahng, S.C. Kim, S.J. Joo, N.K. Kim Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12