4H-SiC Schottky Diodes with High On/Off Current Ratio

4H-SiC Schottky Diodes with High On/Off Current Ratio

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

1145

Page(to):

1148

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013330
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings 4H-SiC Schottky Diodes with High On/Off Current Ratio Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	7 Conference Proceedings Phase Inhomogeneity and Electrical Characteristics of Nickel Silicide Schottky Contacts Formed on 4H-SiC I.P. Nikitina, K.V. Vassilevski, A.B. Horsfall, N.G. Wright, A.G. O'Neill Trans Tech Publications
2 Conference Proceedings Characterisation of the High Temperature Performance of 4H-SiC Schottky Barrier Diodes Blasciuc-Dimitriu, C., Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications	8 Conference Proceedings Higll Temperature Operation of Silicon Carbide Schottky Diodes with Recoverable Avalanche Breakdown Vassilevski, K.V., Nikitina, I.P., Bhatnagar, P., Horsfall, A.B., Wright, N.G., O'Neill, A.G., Uren, M.J., Hilton, K., … Trans Tech Publications
3 Conference Proceedings Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications	9 Conference Proceedings Benefits of High-k Dielectrics in 4H-SiC Trench MOSFETs Wright, N.G., Poolamai, N., Vassilevski, K.V., Horsfall, A.B., Johnson, C.M. Trans Tech Publications
4 Conference Proceedings Optimisation of Implanted Guard-Ring Terminations in 4H-SiC Schottky Diodes Horsfall, A.B., Vassilevski, K.V., Johnson, C.M., Wright, N.G., O'Neill, A.G., Gwilliam, R.M. Trans Tech Publications	10 Conference Proceedings First Principles Derivation of Carrier Transport across Metal - SiC Barriers Dimitriu, C.B., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications
5 Conference Proceedings Analytical Modelling of I-V Characteristics for 4H-SiC Enhancement Mode VJFET Bhatnagar, P., Horsfall, A.B., Wright, N.G., Johnson, C.M., Vassilevski, K.V., O'Neill, A.G. Trans Tech Publications	11 Conference Proceedings 4.6 kV, 10.5 mOhm&×cm² Nickel Silicide Schottky Diodes on Commercial 4H-SiC Epitaxial Wafers K. Vassilevski, I.P. Nikitina, A.B. Horsfall, N.G. Wright, C.M. Johnson Trans Tech Publications
6 Conference Proceedings Edge Termination of SiC Schottky Diodes with Guard Rings Formed by High Energy Boron Implantation Vassilevski, K.V., Horsfall, A.B., Johnson, C.M., Wright, N.G. Trans Tech Publications	12 Conference Proceedings Optimisation of a 4H-SiC Enhancement Mode Power JFET Horsfall, A.B., Johnson, C.M., Wright, N.G., O'Neill, A.G. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12