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Analysis of High Leakage Currents in 4H-SiC Schottky Barrier Diodes Using Optical Beam-Induced Current Measurements

Author(s):
Tsuji, T.
Izumi, S.
Ueda, A.
Fujisawa, H.
Ueno, K.
Tsuchida, H.
Kamata, I.
Jikimoto, T.
Izumi, K.
4 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. date:
2002
Page(from):
1141
Page(to):
1144
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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