Blank Cover Image

A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Author(s):
Fukuda, K.
Senzaki, J.
Kushibe, M.
Kojima, K.
Kosugi, R.
Suzuki, S.
Harada, S.
Suzuki, T.
Tanaka, T.
Arai, K.
5 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. Year:
2002
Page(from):
1057
Page(to):
1060
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings A Large Reduction in Interface-State Density for MOS Capacitor on 4H-SiC (11-2 0) Face Using H2 and H2O Vapor Atmosphere Post-Oxidation Annealing

Fukuda, K., Senzaki, J., Kushibe, M., Kojima, K., Kosugi, R., Suzuki, S., Harada, S., Suzuki, T., Tanaka, T., Arai, K.

Trans Tech Publications
7 Conference Proceedings Interface Properties of MOS Structures Formed on 4H-SiC C(000-1) Face

Fukuda, K., Suzuki, S., Senzaki, J., Cho, W.J., Tanaka, T., Arai, K.

Trans Tech Publications
2 Conference Proceedings Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K.

Trans Tech Publications
8 Conference Proceedings Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, …

Trans Tech Publications
3 Conference Proceedings Significant Improvement of Inversion Channel Mobility in 4H-SiC MOSFET on (11-20) Face Using Hydrogen Post-Oxidation Annealing

Senzaki, J., Fukuda, K., Kojima, K., Harada, S., Kosugi, R., Suzuki, S., Suzuki, T., Arai, K.

Trans Tech Publications
9 Conference Proceedings Influence of the Crystalline Quality of Epitaxial Layers on Inversion Channel Mobility in 4H-SiC MOSFETs

Kojima, K., Ohno, T., Suzuki, S., Senzaki, J., Harada, S., Fukuda, K., Kushibe, M., Masahara, K., Ishida, Y., Takahashi, …

Trans Tech Publications
4 Conference Proceedings Observation of SiO2/SiC Interface with Different Off-Angle from Si(0001) Face Using Transmission Electron Microscopy

Fukuda, K., Suzuki, S., Senzaki, J., Kosugi, R., Tanaka, T., Arai, K.

Trans Tech Publications
10 Conference Proceedings Significant Improvement in Reliability of Thermal Oxide on 4H-SiC (0001) Face Using Ammonia Post-Oxidation Annealing

J. Senzaki, T. Suzuki, A. Shimozato, K. Fukuda, K. Arai

Trans Tech Publications
5 Conference Proceedings High Inversion Channel Mobility of MOSFET Fabricated on 4H-SiC C(000-1) Face Using H2 Post-Oxidation Annealing

Fukuda, K., Senzaki, J., Kojima, K., Suzuki, T.

Trans Tech Publications
11 Conference Proceedings Effect of Off-Angle from Si (0001) Surface and Polytype on Surface Morphology of SiC and C-V Characteristics of SiC MOS Structures

Fukuda, K., Suzuki, S., Senzaki, J., Kosugi, R., Nagai, K., Sekigawa, T., Okushi, H., Yoshida, S., Tanaka, T., Arai, K.

Trans Tech Publications
6 Conference Proceedings Influence of Post-Oxidation Process on the MOS Interface and MOSFETs Properties

Suzuki, S., Cho, W.J., Kosugi, R., Senzaki, J., Harada, S., Fukuda, K.

Trans Tech Publications
12 Conference Proceedings Channel Engineering of Buried-Channel 4H-SiC MOSFET Based on the Mobility Model of the Oxide/4H-SiC Interface

Hatakeyama, T., Harada, S., Suzuki, S., Senzaki, J., Kosugi, R., Fukuda, K., Shinohe, T., Arai, K.

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12