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New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Author(s):
Olafsson, H.OE.
Sveinbjornsson, Einar
Rudenko, T.E.
Kilchytska, V.I.
Tyagulski, I.P.
Osiyuk, I.N.
1 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. Year:
2002
Page(from):
1001
Page(to):
1004
Pages:
4
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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