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Passivation of the 4H-SiC/SiO2 Interface with Nitric Oxide

Author(s):
Williams, J.R.
Chung, G.Y.
Tin, C.C.
McDonald, K.
Farmer, D.
Chanana, R.K.
Weller, R.A.
Pantelides, S.T.
Holland, O.W.
Das, M.K.
Feldman, L.C.
6 more
Publication title:
Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
Title of ser.:
Materials science forum
Ser. no.:
389-393
Pub. date:
2002
Page(from):
967
Page(to):
972
Pages:
6
Pub. info.:
Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498949 [087849894X]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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