Influence of Implantation Temperature and Dose Rate on Secondary Defect Formation in 4H-SiC
- Author(s):
- Publication title:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- Title of ser.:
- Materials science forum
- Ser. no.:
- 389-393
- Pub. Year:
- 2002
- Page(from):
- 823
- Page(to):
- 826
- Pages:
- 4
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
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