Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20)

Author(s):

Publication title:

Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001

Title of ser.:

Materials science forum

Ser. no.:

389-393

Pub. Year:

2002

Page(from):

783

Page(to):

786

Pages:

4

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498949 [087849894X]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013330
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2001
Conf. info. (Venue):	Tsukuba, Japan
Conf. info. (Date):	2001.10.28-2001.11.02

Similar Items:

1 Conference Proceedings Phosphorus Ion Implantation into 4H-SiC (0001) and (11-20) Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	7 Conference Proceedings Electrical Behavior of Implanted Aluminum and Boron near Tail Region in 4H-SiC after High-Temperature Annealing Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications
2 Conference Proceedings Aluminum-Ion Implantation into 4H-SiC (11-20) and (0001) Negoro, Y., Kimoto, T., Matsunami, H. Materials Research Society	8 Conference Proceedings Low Sheet Resistance of High-Dose Aluminium Implanted 4H-SiC using (11-20) Face Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H., Schmid, F., Pensl, G. Trans Tech Publications
3 Conference Proceedings Flat Surface after High-Temperature Annealing for Phosphorus-Ion Implanted 4H-SiC(0001) using Graphite Cap Negoro, Y., Katsumoto, K., Kimoto, T., Matsunami, H. Trans Tech Publications	9 Conference Proceedings Formation of Deep pn Junctions by MeV Al- and B-Ion Implantations into 4H-SiC and Reverse Characteristics Miyamoto, N., Saitoh, A., Kimoto, T., Matsunami, H., Hishida, Y., Watanabe, M. Trans Tech Publications
4 Conference Proceedings High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	10 Conference Proceedings Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
5 Conference Proceedings High-Voltage SiC pn Diodes with Avalanche Breakdown Fabricated by Aluminum or Boron Ion Implantation Negoro, Y., Miyamoto, N., Kimoto, T., Matsunami, H. Trans Tech Publications	11 Conference Proceedings Formation of Epitaxial Mesa Structures on 4H-SiC (0001) and (11-20) Substrates Chen, Y., Kimoto, T., Takeuchi, Y., Matsunami, H. Trans Tech Publications
6 Conference Proceedings Technological Aspects of Ion Implantation in SiC Device Processes Negoro, Y., Kimoto, T., Matsunami, H. Trans Tech Publications	12 Conference Proceedings Epitaxial Growth and Characterization of 4H-SiC(11-20) and (03-38) Kimoto, T., Hashimoto, K., Fujihira, K., Danno, K., Nakamura, S., Negoro, Y., Matsunami, H. Materials Research Society

1

2

3

4

5

6

7

8

9

10

11

12