High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
- Author(s):
Muller, St.G. Brady, M.F. Brixius, W.H. Fechko, G. Glass, R.C. Henshall, D. Hobgood, H.M. Jenny, J.R. Leonard, R. Malta, D. Powell, A. Tsvetkov, V.F. Allen, S.T. Palmour, J. Carter, C.H.,Jr. - Publication title:
- Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001
- Title of ser.:
- Materials science forum
- Ser. no.:
- 389-393
- Pub. Year:
- 2002
- Page(from):
- 23
- Page(to):
- 28
- Pages:
- 6
- Pub. info.:
- Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498949 [087849894X]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
High Quality SiC Substrates for Semiconductor Devices: From Research to Industrial Production
Trans Tech Publications |
7
Conference Proceedings
Silicon Carbide Crystal and Substrate Technology: A Survey of Recent Advances
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
Status of 4H-SiC Substrate and Epitaxial Materials for Commercial Power Applications
Materials Research Society |
3
Conference Proceedings
Status of Large Diameter SiC Crystal Growth for Electronic and Optical Applications
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
MRS - Materials Research Society |
6
Conference Proceedings
Development of Large Diameter High-Purity Semi-Insulating 4H-SiC Wafers for Microwave Devices
Trans Tech Publications |
Trans Tech Publications |