Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Defect Property in He+ Implanted Silicon Probed by Slow Positron Beam

Author(s):

Zhou, X.Y.

Publication title:

Positron annihilation, ICPA-12 : Proceedings of the 12th International Conference on Positron Annihilation, August 6-12, 2000, München, Germany

Title of ser.:

Materials science forum

Ser. no.:

363-365

Pub. Year:

2001

Page(from):

475

Page(to):

477

Pages:

3

Pub. info.:

Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498758 [0878498753]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013318
Series ID:	PA00000012
Conf. info. (Name):	International Conference on Positron Annihilation : ICPA
Conf. info. (Number):	12th
Conf. info. (Venue):	Munchen, Germany
Conf. info. (Date):	2000.08.06-2000.08.12

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