High-Performance Surface-Channel Diamond Field-Effect Transistors
- Author(s):
Umezawa, H. Taniuchi, H. Arima, T. Tachiki, M. Okushi, H. Kawarada, H. - Publication title:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- Title of ser.:
- Materials science forum
- Ser. no.:
- 353-356
- Pub. Year:
- 2001
- Page(from):
- 815
- Page(to):
- 818
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Low-Temperature Operation Of Diamond Surface-Channel Field-Effect Transistors
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
8
Conference Proceedings
The Influence of Interface Traps on the High Frequency and High Temperature Performance of SiC Field Effect Transistors
MRS - Materials Research Society |
3
Conference Proceedings
Nanodevice Fabrication on Hydrogenated Diamond Surface Using Atomic Force Microscope
Materials Research Society |
SPIE - The International Society of Optical Engineering |
Materials Research Society |
10
Conference Proceedings
High performance organic field-effect transistors using high-K dielectrics grown by atomic layer deposition (ALD)
Society of Photo-optical Instrumentation Engineers |
Materials Research Society |
MRS - Materials Research Society |
Materials Research Society |
12
Conference Proceedings
High Performance P-Channel Schottky Barrier Thin-Film Transistors with PtSi Source/Drain
Electrochemical Society |