Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

Turn-off Performance of a 2.6 kV 4H-SiC Asymmetrical GTO Thyristor

Author(s):

Agarwal, A.K.

Publication title:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

Title of ser.:

Materials science forum

Ser. no.:

353-356

Pub. Year:

2001

Page(from):

743

Page(to):

746

Pages:

4

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013315
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2000 : 3rd
Conf. info. (Venue):	Benediktinerkloster Banz, Germany
Conf. info. (Date):	2000.09.00

Similar Items:

1 Conference Proceedings Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. Trans Tech Publications	7 Conference Proceedings Optical Switch-On of Silicon Carbide Thyristor Levinshtein, M.E., Ivanov, P.A., Agarwal, A.K., Palmour, J.W. Trans Tech Publications
2 Conference Proceedings Dynamic Performance of 3.1 kV 4H-SiC Asymmetrical GTO Thyristors Agarwal, A.K., Ivanov, P.A., Levinshtein, M.E., Palmour, J.W., Rumyantsev, S.L. Trans Tech Publications	8 Conference Proceedings Analysis of the Effect of Temperature on Base Current Gain in Power 4H-SiC BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Krishnaswami, S., Palmour, J.W. Trans Tech Publications
3 Conference Proceedings Low Frequency Noise in 4H-SiC MOSFETs S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, P.A. Ivanov, J.W. Palmour Trans Tech Publications	9 Conference Proceedings Fast Switch-Off of High Voltage 4H-SiC npn BJTs from Deep Saturation Mode P.A. Ivanov, M.E. Levinshtein, J.W. Palmour, A.K. Agarwal, Q.J. Zhang Trans Tech Publications
4 Conference Proceedings 2600 V, 12 A, 4H-SiC, Asymmetrical Gate Turn Off (GTO) Thyristor Development Agarwal, A., Ryu, S. -H., Singh, R., Kordina, O., Palmour, J. W. Trans Tech Publications	10 Conference Proceedings 4H-SiC Gate Turn-Off(GTO)Thyristor Development Casady,J.B., Agarwal,A.K., Rowland,L.B., Siergiej,R.R., Seshadri,S., Mani,S., Barrows,J., Piceone,D., Sanger,P.A., … Trans Tech Publications
5 Conference Proceedings 4H-SiC MOSFETs with Si-Like Low-Frequency Noise Characteristics S.L. Rumyantsev, M.S. Shur, M.E. Levinshtein, P.A. Ivanov, J.W. Palmour Trans Tech Publications	11 Conference Proceedings Optical Triggering of 12 kV 1 cm² 4H-SiC Thyristors S.L. Rumyantsev, M.E. Levinshtein, M.S. Shur, T. Saxena, Q.J. Zhang Trans Tech Publications
6 Conference Proceedings Base Current Gain of Power (1800 V, 10 A) 4H-SiC npn-BJTs Ivanov, P.A., Levinshtein, M.E., Agarwal, A.K., Palmour, J.W., Ryu, S.H. Trans Tech Publications	12 Conference Proceedings A 1cm x 1cm, 5kV, 100A, 4H-SiC Thyristor Chip for High Current Modules Agarwal, A.K., Krishnaswami, S., Damsky, B., Richmond, J., Capell, C., Ryu, S.H., Palmour, J.W. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12