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A Comparison between Physical Simulations and Experimental Results in 4H-SiC MESFETs with Non-Constant Doping in the Channel and Buffer Layers

Author(s):
Eriksson, J.
Rorsman, N.
Zirath, H.
Jonsson, R.
Wahab, Q.u.
Rudner, S.
1 more
Publication title:
Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
Title of ser.:
Materials science forum
Ser. no.:
353-356
Pub. date:
2001
Page(from):
699
Page(to):
702
Pages:
4
Pub. info.:
Uetikon-Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498734 [0878498737]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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