Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface

Dissolution Mechanism of the Carbon Islands at the SiO2/SiC Interface

Author(s):

Publication title:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

Title of ser.:

Materials science forum

Ser. no.:

353-356

Pub. Year:

2001

Page(from):

659

Page(to):

662

Pages:

4

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013315
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2000 : 3rd
Conf. info. (Venue):	Benediktinerkloster Banz, Germany
Conf. info. (Date):	2000.09.00

Similar Items:

1 Conference Proceedings Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon Krafcsik, O.H., Vida, G., Josepovits, K.V., Deak, P., Radnoczi, G.Z., Pecz, B., Barsony, I. Trans Tech Publications	7 Conference Proceedings Indications for Nitrogen-Assisted Removal of Carbon from SiO2-SiC Interface Jamet, P., Dimitrijev, S., Tanner, P. Trans Tech Publications
2 Conference Proceedings Void-Free Epitaxial Growth of Cubic SiC Crystallites during CO Heat Treatment of Oxidized Silicon Krafcsik, O.H., Vida, G., Josepovits, K.V., Deak, P., Radnoczi, G.Z., Pecz, B., Barsony, I. Trans Tech Publications	8 Conference Proceedings Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs - Challenges and Advances Pantelides, S.T., Wang, S., Franceschetti, A., Buczko, R., Di Ventra, M., Rashkeev, S.N., Tsetseris, L., Evans, M.H., … Trans Tech Publications
3 Conference Proceedings Where Would the Electronic States of a Small Graphite-Like Carbon Island Contribute to the SiC/SiO2 Interface State Density Distribution? Thill, C., Knaup, J., Deak, P., Frauenheim, T., Choyke, W.J. Trans Tech Publications	9 Conference Proceedings Sputtered SiO2:C Films Showing Visible Photoluminescence Sendova-Vassileva, M., Tzenov, N., Dimova-Malinovska, D., Josepovits, K. V. MRS - Materials Research Society
4 Conference Proceedings A Cause for SiC/SiO2 Interface States: the Site Selection of Oxygen in SiC Deak, P., Gali, A., Hajnal, Z., Frauenheim, Th., Son, N.T., Janzen, E., Choyke, W.J., Ordejon, P. Trans Tech Publications	10 Conference Proceedings Positron Annihilation Studies of Defects at the SiO2/SiC Interface Dekker, J., Saarinen, K., Olafsson, H.O., Sveinbjornsson, E.O. Trans Tech Publications
5 Conference Proceedings The Inefficiency of H₂-Passivation as a Criterion for the Origin of SiC/SiO₂ Deep Interface States -- A Theoretical Study J.M. Knaup, P. Deák, T. Frauenheim Trans Tech Publications	11 Conference Proceedings Combined N₂O and Phosphorus Passivations for the 4H-SiC/SiO₂ Interface with Oxide Grown at 1400°C H. Rong, Y.K. Sharma, P.A. Mawby Trans Tech Publications
6 Conference Proceedings Effect of Post-Oxidation Annealing on High-Temperature Grown SiO₂/4H-SiC Interface J.H. Moon, K.Y. Cheong, H.K. Song, J.H. Yim, M.S. Oh Trans Tech Publications	12 Conference Proceedings SIMS Analyses of SiO2/4H-SiC(0001) Interface Yamashita, K., Kitabatake, M., Kusumoto, O., Takahashi, K., Uchida, M., Miyanaga, R., Itoh, H., Yoshikawa, M. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12