Techniques for Depth Profiling of Dopants in 4H-SiC
- Author(s):
Oesterman, J. Hallen, A. Anand, S. Linnarsson, M.K. Andersson, H. Aberg, D. Panknin, D. Skorupa, W. - Publication title:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- Title of ser.:
- Materials science forum
- Ser. no.:
- 353-356
- Pub. Year:
- 2001
- Page(from):
- 559
- Page(to):
- 562
- Pages:
- 4
- Pub. info.:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
1
Conference Proceedings
Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
Trans Tech Publications |
Trans Tech Publications |
2
Conference Proceedings
Carrier Concentrations in Implanted and Epitaxial 4H-SiC by Scanning Spreading Resistance Microscopy
Trans Tech Publications |
Materials Research Society |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
10
Conference Proceedings
Simulations of High-Voltage 4H-SiC p+nn+ Diodes Using a Transient Model for the Deep Boron Level
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |