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Annealing Process of Defects in Epitaxial SiC Induced by He and Electron Irradiation: Positron Annihilation Study

Author(s):
Kawasuso, A.
Redmann, F.
Krause-Rehberg, R.
Sperr, P.
Frank, T.
Weidner, M.
Pensl, G.
Itoh, H.
3 more
Publication title:
Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
Title of ser.:
Materials science forum
Ser. no.:
353-356
Pub. date:
2001
Page(from):
537
Page(to):
542
Pages:
6
Pub. info.:
Uetikon-Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498734 [0878498737]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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