Intrinsic Defects in Silicon Carbide Polytypes
- Author(s):
- Publication title:
- Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
- Title of ser.:
- Materials science forum
- Ser. no.:
- 353-356
- Pub. Year:
- 2001
- Page(from):
- 499
- Page(to):
- 504
- Pages:
- 6
- Pub. info.:
- Uetikon-Zuerich, Switzerland: Trans Tech Publications
- ISSN:
- 02555476
- ISBN:
- 9780878498734 [0878498737]
- Language:
- English
- Call no.:
- M23650
- Type:
- Conference Proceedings
Similar Items:
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
Trans Tech Publications |
4
Conference Proceedings
Intrinsic Defects in Semi-Insulating SiC: Deep Levels and their Roles in Carrier Compensation
Trans Tech Publications |
Trans Tech Publications |
5
Conference Proceedings
New Type of Defects Explored by Theory: Silicon Interstitial Clusters in SiC
Trans Tech Publications |
11
Conference Proceedings
Annealing Behaviour of Vacancy-and Antisite-Related Defects in Electron-Irradiated 4H-SiC
Trans Tech Publications |
Trans Tech Publications |
12
Conference Proceedings
Transition Metal Defects in Cubic and Hexagonal Polytypes of SiC: Site Selection, Magnetic and Optical Properties from Ab Initio Calculations
Trans Tech Publications |