Blank Cover Image

Shallow Dopant and Surface Levels in 6H-SiC MOS Structures Studied by Thermally Stimulated Current Technique

Author(s):
Lysenko, V.S.
Osiyuk, I.P.
Rudenko, T.E.
Tyagulski, I.P.
Sveinbjoernsson, Einar
Olafsson, H.Oe.
1 more
Publication title:
Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
Title of ser.:
Materials science forum
Ser. no.:
353-356
Pub. Year:
2001
Page(from):
479
Page(to):
482
Pages:
4
Pub. info.:
Uetikon-Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498734 [0878498737]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

Similar Items:

1 Conference Proceedings New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Olafsson, H.OE., Sveinbjornsson, Einar, Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.

Trans Tech Publications
7 Conference Proceedings On Shallow Interface States in n-Type 4H-SiC Metal-Oxide-Semiconductor Structures

Olafsson, H.OE., Allerstam, F., Sveinbjornsson, E.OE.

Trans Tech Publications
2 Conference Proceedings New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Olafsson, H.O., Sveinbjornsson, E.O., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.

Trans Tech Publications
8 Conference Proceedings Charge Trapping in High-Dose Ge-Implanted and Si- Implanted Silicon-Dioxide Thin Films

Nazarov, A.N., Osiyuk, I.N., Tyagulskii, I.P., Lysenko, V.S., Gebel, T., Skorupa, W.

Electrochemical Society
3 Conference Proceedings A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface

Olafsson, H.O., Sveinbjornsson, E.O., Rudenko, T.E., Kilchytska, V.I., Tyagulski, I.P., Osiyuk, I.N.

Trans Tech Publications
9 Conference Proceedings Enhancement of Inversion Channel Mobility in 4H-SiC MOSFETs using a Gate Oxide Grown in Nitrous Oxide (N2O)

Gudjonsson, G., Olafsson, H.O., Sveinbjoernsson, E.O.

Trans Tech Publications
4 Conference Proceedings A Comparison between SiO2/4H-SiC Interface Traps on (0001) and (11-20) Faces

Olafsson, H.Oe., Hallin, C., Sveinbjoernsson, E.Oe.

Trans Tech Publications
10 Conference Proceedings Thermally Stimulated Current Separation of Hole and Acceptor Trap Density in 4H-SiC MOS Devices Using Gamma Ray Irradiation

M.J. Tadjer, K.D. Hobart, R.E. Stahlbush, P.J. McMarr, H.L. Hughes

Trans Tech Publications
5 Conference Proceedings Cryogenic investigations of SIMOX buried oxide parameters

Lysenko, V.S., Tyagulski, I.P., Osiyuk, I.N., Gomeniuk, Y.V.

Kluwer Academic Publishers
11 Conference Proceedings Characterization of SiC MOS Structures Using Conductance Spectroscopy and Capacitance Voltage Analysis

Sveinbjornsson, E. O., Ahnoff, M., Olafsson, H. O.

Trans Tech Publications
6 Conference Proceedings Dissipation Behaviour and Critical Currents under the Strong Electrostatic Field in BiPbSrCaCuO Thin Film

Lysenko, V.S., Gomeniuk, Y.V., Lozovski, V.Z., Tyagulski, I.P., osiyuk, I.N., Varyukhin, V.N.

Electrochemical Society
12 Conference Proceedings Interface States in 4H- and 6H-SiC MOS Capacitors: A Comparative Study between Conductance Spectroscopy and Thermal Dielectric Relaxation Current Technique

L.S. Lovlie, I. Pintilie, S. Kumar C-P., U. Grossner, B.G. Svensson

Trans Tech Publications
1
 
2
 
3
 
4
 
5
 
6
 
7
 
8
 
9
 
10
 
11
 
12