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Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient

Author(s):
Publication title:
Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000
Title of ser.:
Materials science forum
Ser. no.:
353-356
Pub. date:
2001
Page(from):
459
Page(to):
462
Pages:
4
Pub. info.:
Uetikon-Zuerich, Switzerland: Trans Tech Publications
ISSN:
02555476
ISBN:
9780878498734 [0878498737]
Language:
English
Call no.:
M23650
Type:
Conference Proceedings

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