Self Diffusion in SiC: the Role of Intrinsic Point Defects

Self Diffusion in SiC: the Role of Intrinsic Point Defects

Author(s):

Publication title:

Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000

Title of ser.:

Materials science forum

Ser. no.:

353-356

Pub. Year:

2001

Page(from):

323

Page(to):

326

Pages:

4

Pub. info.:

Uetikon-Zuerich, Switzerland: Trans Tech Publications

ISSN:

02555476

ISBN:

9780878498734 [0878498737]

Language:

English

Call no.:

M23650

Type:

Conference Proceedings

Details

TDL ID:	ZA00013315
Series ID:	PA00000012
Conf. info. (Name):	ECSCRM : European Conference on Silicon Carbide and Related Materials
Conf. info. (Number):	2000 : 3rd
Conf. info. (Venue):	Benediktinerkloster Banz, Germany
Conf. info. (Date):	2000.09.00

Similar Items:

1 Conference Proceedings The Nature and Diffusion of Intrinsic Point Defects in SiC Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O. Trans Tech Publications	7 Conference Proceedings Boron in SiC: Structure and Kinetics Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications
2 Conference Proceedings The Nature and Diffusion of Intrinsic Point Defects in SiC Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O. Trans Tech Publications	8 Conference Proceedings Kinetic Mechanisms for the Deactivation of Nitrogen in SiC Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications
3 Conference Proceedings Ab Initio Study of Intrinsic Point Defects and Dopant-Defect Complexes in SiC: Application to Boron Diffusion Bockstedte, M., Pankratov, O. Trans Tech Publications	9 Conference Proceedings Carbon Interstitials in SiC: A Model for the DII Center Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications
4 Conference Proceedings Kinetic Aspects of the Interstitial-Mediated Boron Diffusion in SiC Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications	10 Conference Proceedings Carbon Interstitials in SiC: A Model for the DII Center Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications
5 Conference Proceedings The Solubility and Defect Equilibrium on the n-Type Dopants Nitrogen and Phosphorus in 4H-SiC: A Theoretical Study Bockstedte, M., Mattausch, A., Pankratov, O. Trans Tech Publications	11 Conference Proceedings Ab Initio Study of Dopant Interstitials in 4H-SiC Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications
6 Conference Proceedings Identification and Annealing of Common Intrinsic Defect Centers Bockstedte, M., Heid, M., Mattausch, A., Pankratov, O. Trans Tech Publications	12 Conference Proceedings A Theoretical Study of Carbon Clusters in SiC: a Sink and a Source of Carbon Interstitials Mattausch, A., Bockstedte, M., Pankratov, O. Trans Tech Publications

1

2

3

4

5

6

7

8

9

10

11

12